unisonic technologies co., ltd ut2304 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2010 unisonic technologies co., ltd qw-r502-150.d n-channel enhancement mode ? description the ut2304 is an n-channel power mosfet that can achieve the lowest possible on-resistance, extremely and cost- effectiveness device by using advanced trench technology. ? symbol 2.gate 1.source 3.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing ut2304l-ae2-r UT2304G-AE2-R sot-23-3 s g d tape reel ut2304l-ae3-r ut2304g-ae3-r sot-23 s g d tape reel ? marking 23d l: lead free g: halogen free
ut2304 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-150.d absolute maximum ratings (ta = 25 , unless otherwise specified) parameter symbol rating units drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (note 3) i d 2.5 a pulsed drain current (note 1, 2) i dm 10 a power dissipation p d 1.4 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction to ambient (note 3) ja 90 c/w ? electrical characteristics (t j =25 , unless otherwise specified) parameter symbol test conditions min typ max units off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250ua 30 v drain-source leakage current i dss v ds =30v,v gs =0v 1 a gate-source leakage current i gss v gs =20v, v ds =0v 100 na breakdown voltage temperature coefficient bv dss / t j reference to 25 , i d =1ma 0.1 v/c on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250ua 1 3 v v gs =10v, i d =2.5a 117 m ? static drain-source on-state resistance (note 2) r ds(on) v gs =4.5v, i d =2a 190 m ? dynamic characteristics input capacitance c iss 120 190 pf output capacitance c oss 62 pf reverse transfer capacitance c rss v gs =0v,v ds =25v, f=1.0mhz 24 pf switching characteristics turn-on delay time (note 2) t d(on) 5 ns turn-on rise time t r 9 ns turn-off delay time t d(off) 11 ns turn-off fall time t f v ds =15v, v gs =10v, i d =1a, r g =3.3 ? , r d =15 ? 2 ns total gate charge (note 2) q g 3 5 nc gate-source charge q gs 0.8 nc gate-drain charge q gd v ds =24v, v gs =4.5v, i d =2.5a 1.8 nc source-drain diode ratings and characteristics forward on voltage (note 2) v sd v gs =0v, i s =1.2a 1.2 v reverse recovery time (note 2) t rr 24 ns reverse recovery charge q rr i s =2a, v gs =0v, di/dt=100a/ s 23 nc notes: 1. pulse width limited by t j(max) 2. pulse width 300 s, duty cycle 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board
ut2304 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-150.d ? typical characteristics drain current,i d (a) drain current,i d (a) normalized r ds(on) r ds(on) ( ? ) t j =25 t j =150 10.00 1.00 0.10 0.01 0.1 0.5 0.9 1.3 continuous source current, i s (a) source-to-drain voltage, v sd (v) forward characteristic of reverse diode gate threshold voltage, v gs(th) (v) junction temperature, t j ( ) gate threshold voltage vs. junction temperature 2.05 1.85 1.65 1.45 1.25 0 -50 50 100 150
ut2304 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-150.d ? typical characteristics(cont.) v ds =25v v ds =20v v ds =15v i d =2.5a 12 10 8 6 4 2 0 0123456 gate to source voltage, v gs (v) total gate charge, q g (nc) gate charge characteristics typical capacitanc e characteristics drain-to-source voltage,v ds (v) c iss c oss c rss f=1.0mh z 1000 100 capacitance (pf) 10 15 9 13 17 21 25 29 0.1 1 0.1 drain-to-source voltage,v ds (v) maximum safe operating area 100 1 0.01 100 0.0001 pulse width, t (s) effective transient thermal impedance 1000 0.01 1 10 0.001 0.01 0.1 1 normalized thermal response (r thja ) 10 10 1ms t a =25c single pulse 10ms 100ms 1s dc 100 0.001 0.1 p dm t t duty factor = t/t peak t j = p dm x r thja + t a r thja = 270 /w drain current,i d (a) d=0.5 0.2 0.1 0.05 0.01 single pulse
ut2304 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-150.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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